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File name: | AO4466 - N-Channel Enhancement Mode Field Effect Transistor.pdf [preview AO4466 - N-Channel Enhancement Mode Field Effect Transistor] |
Size: | 127 kB |
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Mfg: | Various |
Model: | AO4466 - N-Channel Enhancement Mode Field Effect Transistor 🔎 |
Original: | AO4466 - N-Channel Enhancement Mode Field Effect Transistor 🔎 |
Descr: | . Electronic Components Datasheets Various AO4466 - N-Channel Enhancement Mode Field Effect Transistor.pdf |
Group: | Electronics > Other |
Uploaded: | 16-09-2021 |
User: | Anonymous |
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Extracted files: | 1 | |
File name AO4466 - N-Channel Enhancement Mode Field Effect Transistor.pdf AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 9.4A (V GS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) < 23m (VGS = 10V) applications. The source leads are separated to allow RDS(ON) < 35m (VGS = 4.5V) a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4466 is Pb-free (meets ROHS & Sony 259 specifications). AO4466L is a Green Product ordering option. AO4466 and AO4466L are electrically identical. D S D S D S D G D G SOIC-8 S Absolute Maximum Ratings TA=25 |
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